JPH0216016B2 - - Google Patents

Info

Publication number
JPH0216016B2
JPH0216016B2 JP57181002A JP18100282A JPH0216016B2 JP H0216016 B2 JPH0216016 B2 JP H0216016B2 JP 57181002 A JP57181002 A JP 57181002A JP 18100282 A JP18100282 A JP 18100282A JP H0216016 B2 JPH0216016 B2 JP H0216016B2
Authority
JP
Japan
Prior art keywords
film
region
metal silicide
collector
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57181002A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5968961A (ja
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57181002A priority Critical patent/JPS5968961A/ja
Publication of JPS5968961A publication Critical patent/JPS5968961A/ja
Publication of JPH0216016B2 publication Critical patent/JPH0216016B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP57181002A 1982-10-13 1982-10-13 半導体集積回路装置及びその製造方法 Granted JPS5968961A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57181002A JPS5968961A (ja) 1982-10-13 1982-10-13 半導体集積回路装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57181002A JPS5968961A (ja) 1982-10-13 1982-10-13 半導体集積回路装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS5968961A JPS5968961A (ja) 1984-04-19
JPH0216016B2 true JPH0216016B2 (en]) 1990-04-13

Family

ID=16093011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57181002A Granted JPS5968961A (ja) 1982-10-13 1982-10-13 半導体集積回路装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS5968961A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0654795B2 (ja) * 1986-04-07 1994-07-20 三菱電機株式会社 半導体集積回路装置及びその製造方法

Also Published As

Publication number Publication date
JPS5968961A (ja) 1984-04-19

Similar Documents

Publication Publication Date Title
US4705599A (en) Method for fabricating bipolar transistor in integrated circuit
US4949153A (en) Semiconductor IC device with polysilicon resistor
US4691436A (en) Method for fabricating a bipolar semiconductor device by undercutting and local oxidation
JPS61147572A (ja) 半導体装置の製造方法
US4740482A (en) Method of manufacturing bipolar transistor
JP2003188268A (ja) 半導体装置およびその製造方法
JPH0135505B2 (en])
JPH058582B2 (en])
JPH0254662B2 (en])
JPH0216016B2 (en])
JPH0437581B2 (en])
JPH0136710B2 (en])
JPH0318738B2 (en])
JPS6246072B2 (en])
JPH0420263B2 (en])
JPH03190139A (ja) 半導体集積回路装置
JPS645472B2 (en])
JPH0436576B2 (en])
JPS61108169A (ja) 半導体装置
JPH0418461B2 (en])
JPS63146466A (ja) ベース・エミッタコンタクト構成体及びその製造方法
JPS612363A (ja) 半導体装置の製造方法
JPH0136709B2 (en])
JPH0418462B2 (en])
JPS63114261A (ja) トランジスタ用の自己整合型ベース分路